Datasheet MBR160RLG - ON Semiconductor DIODE, SCHOTTKY, 1 A, 60 V

Detailed Description

Manufacturer: ON Semiconductor

Description: DIODE, SCHOTTKY, 1 A, 60 V

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Docket:
MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode.

State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features

Simulation Model

Specifications:

• Current If @ Vf: 1 A
• Current Ifsm: 25 A
• Device Marking: MBR160RL
• Diode Type: Schottky
• External Diameter: 3.05 mm
• External Length / Height: 6.6 mm
• Forward Current If Max: 1 A
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 25 A
• Forward Voltage VF Max: 750 mV
• Forward Voltage: 750 mV
• Junction Temperature Tj Max: 150°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: Axial Leaded
• Repetitive Reverse Voltage Vrrm Max: 60 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes