Datasheet HSMS-286C-TR1G - Avago Technologies DIODE, SCHOTTKY, MICROWAVE

Avago Technologies HSMS-286C-TR1G

Part Number: HSMS-286C-TR1G

Detailed Description

Manufacturer: Avago Technologies

Description: DIODE, SCHOTTKY, MICROWAVE

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Docket:
HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago's HSMS286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz.

They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. Available in various package configurations, this family of detector diodes provides low cost solutions to a wide variety of design problems. Avago's manufacturing techniques assure that when two or more diodes are mounted into a single surface mount package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match.

Specifications:

  • Breakdown Voltage Vbr: 4 V
  • Capacitance Ct: 0.25 pF
  • Diode Configuration: Dual Series Connection
  • Diode Type: RF Schottky
  • Forward Current If Max: 1 mA
  • Forward Current If(AV): 100 mA
  • Forward Voltage VF Max: 350 mV
  • Forward Voltage: 350 mV
  • Mounting Type: SMD
  • Number of Pins: 3
  • Package / Case: SOT-323
  • Pin Configuration: c
  • Repetitive Reverse Voltage Vrrm Max: 4 V
  • Reverse Voltage Vr Max: 4 V
  • SMD Marking: T2
  • SVHC: No SVHC (15-Dec-2010)
  • Tape Width: 8.0 mm
  • Thermal Capacitance Ct: 0.3 pF

RoHS: Yes

Other Names:

HSMS286CTR1G, HSMS 286C TR1G

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