Datasheet BAV199W,115 - NXP

Detailed Description

Manufacturer: NXP

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BAV199W Low-leakage double diode

Specifications:

• Diode Type: Switching
• Forward Current (AV): 150 mA
• Forward Surge Current Max, Ifsm: 4 A
• Forward Voltage Max, VF: 1.25 V
• Package / Case: SOT-323
• Repetitive Reverse Voltage Max, Vrrm: 85 V
• Reverse Recovery Time, trr: 3 µs

RoHS: Yes

Other Names:

BAV199W115, BAV199W 115