Datasheet C4D02120E - Cree SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252
Part Number: C4D02120E
Detailed Description
Manufacturer: Cree
Description: SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252
Specifications:
- Diode Type: SiC Schottky
- Forward Current If(AV): 5.9 A
- Forward Surge Current Ifsm Max: 19 A
- Forward Voltage VF Max: 1.8 V
- Repetitive Reverse Voltage Vrrm Max: 1200 V
RoHS: Yes
