Datasheet TK12E60U - Toshiba MOSFET, N CH, 600 V, 12 A, TO220

Toshiba TK12E60U

Part Number: TK12E60U

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 12 A, TO220

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Docket:
TK12E60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK12E60U
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

  • Continuous Drain Current Id: 12 A
  • Drain Source Voltage Vds: 600 V
  • Number of Pins: 3
  • On Resistance Rds(on): 0.4 Ohm
  • Power Dissipation: 144 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5
  • International Rectifier - AUIR2085S

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