Datasheet NGD8205ANT4G - ON Semiconductor IGBT, IGNITION, N-CH, 350 V, 20 A, DPAK

Detailed Description

Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, N-CH, 350 V, 20 A, DPAK

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Docket:
NGD8205N, NGD8205AN Ignition IGBT
20 Amp, 350 Volt, N-Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
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Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• Collector Emitter Voltage Vces: 1.3 V
• DC Collector Current: 20 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 125 W
• Transistor Case Style: TO-252
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)