Datasheet VS-40MT120UHAPBF - Vishay IGBT MODULE, 1200 V, 80 A, MTP

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 1200 V, 80 A, MTP

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Docket:
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
· Ultrafast Non Punch Through (NPT) technology · Positive VCE(on) temperature coefficient · 10 s short circuit capability · Square RBSOA · HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF · Al2O3 DBC · Optional SMD thermistor (NTC)

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 5.35 V
• DC Collector Current: 80 A
• Number of Pins: 12
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 463 W
• Transistor Case Style: MTP
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VS40MT120UHAPBF, VS 40MT120UHAPBF