Datasheet VS-GB100DA60UP - Vishay IGBT MODULE, 600 V, 100 A, SOT-227

Vishay VS-GB100DA60UP

Part Number: VS-GB100DA60UP

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 100 A, SOT-227

data sheetDownload Data Sheet

Docket:
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
· NPT warp 2 speed IGBT technology with positive temperature coefficient · Square RBSOA · HEXFRED® antiparallel diodes with ultrasoft reverse recovery

Specifications:

  • Collector Emitter Voltage V(br)ceo: 600 V
  • Collector Emitter Voltage Vces: 2.4 V
  • DC Collector Current: 125 A
  • Number of Pins: 4
  • Operating Temperature Range: -40°C to +150°C
  • Power Dissipation: 447 W
  • Transistor Case Style: SOT-227
  • Transistor Polarity: NPN
  • RoHS: Yes

Other Names:

VSGB100DA60UP, VS GB100DA60UP

EMS supplier