Datasheet VS-GB200TS60NPBF - Vishay IGBT MODULE, 600 V, 209 A, INT-A-PAK

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 209 A, INT-A-PAK

Download Data Sheet

Docket:
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A
FEATURES
· Generation 5 Non Punch Through (NPT) technology · Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz · Low VCE(on) · 10 s short circuit capability · Square RBSOA · Positive VCE(on) temperature coefficient

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.6 V
• DC Collector Current: 209 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 781 W
• Transistor Case Style: INT-A-PAK
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VSGB200TS60NPBF, VS GB200TS60NPBF