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Datasheet BSP316P L6327 - Infineon MOSFET, P-CH, 100 V, 680 mA, SOT-223

Infineon BSP316P L6327

Part Number: BSP316P L6327

Manufacturer: Infineon

Description: MOSFET, P-CH, 100 V, 680 mA, SOT-223

data sheetDownload Data Sheet

Docket:
BSP316P SIPMOS Small-Signal-Transistor
Feature P-Channel Enhancement mode Logic Level dv/dt rated
Qualified according to AEC Q101
Drain pin 2/4 Gate pin1 Source pin 3
Product Summary VDS R DS(on) ID -100 1.8 -0.68 V A

Specifications:

  • Continuous Drain Current Id: -680 mA
  • Drain Source Voltage Vds: -100 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 4
  • On Resistance Rds(on): 1.4 Ohm
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 1.8 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -1.5 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: P Channel
  • RoHS: Yes

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