Datasheet IPB025N10N3 G - Infineon MOSFET, N-CH, 100 V, 180 A, TO263-7

Infineon IPB025N10N3 G

Part Number: IPB025N10N3 G

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N-CH, 100 V, 180 A, TO263-7

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Docket:
IPB025N10N3 G
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TM

Specifications:

  • Continuous Drain Current Id: 180 A
  • Drain Source Voltage Vds: 100 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 7
  • On Resistance Rds(on): 0.002 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 300 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.7 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Yes

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