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Datasheet IPB036N12N3 G - Infineon MOSFET, N-CH, 120 V, 180 A, TO263-7

Infineon IPB036N12N3 G

Part Number: IPB036N12N3 G

Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 180 A, TO263-7

data sheetDownload Data Sheet

Docket:
IPB036N12N3 G
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Specifications:

  • Continuous Drain Current Id: 180 A
  • Drain Source Voltage Vds: 120 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 7
  • On Resistance Rds(on): 0.0029 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 300 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Yes

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