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Datasheet IPB038N12N3 G - Infineon MOSFET, N-CH, 120 V, 120 A, TO263-3

Infineon IPB038N12N3 G

Part Number: IPB038N12N3 G

Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 120 A, TO263-3

data sheetDownload Data Sheet

Docket:
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO-263) ID 120 3.8 120 V m A
Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 120 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.0032 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 300 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Yes

    Price IPB038N12N3 G
    ProviderNamePrice
    AliExpress20PCS/LOT HGTP3N60A4 TO-220/ 2SC3552-N TO-3P / 2SK2272 TO-3PF / IPB038N12N3G TO-263 / HGTP3N60A4D 3N60A4D TO-22018,20 $
    More about terms of delivery »
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