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Datasheet IPD110N12N3 G - Infineon MOSFET, N-CH, 120 V, 75 A, TO252-3

Infineon IPD110N12N3 G

Part Number: IPD110N12N3 G

Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 75 A, TO252-3

data sheetDownload Data Sheet

Docket:
IPD110N12N3 G IPS110N12N3 G
"%&$!"#TM3Power-Transistor
Features R ( 492 ??6= ?@ C == 6= >2 6G R I46=6?E E 492 C IR ;I"[# AC 5F4E ) ' = 82 6 86 @ ! R/ 6C = H @ ?C :D 2 ?46 R ;I"[# J@ 6D E R U @ A6C E E 2 :?8 6>A6C E 6 2 FC R * 3 766 = 5 A= E , @ # - 4@ >A= ?E 92 = 86? 766 C 62 2 :?8 :2 @ C R + F2 = :65 2 44@ C :7 5:?8 E % @
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Product Summary V ;I R ;I"[#$>2 I I; )*( )) /K Z" 7

Specifications:

  • Continuous Drain Current Id: 75 A
  • Drain Source Voltage Vds: 120 V
  • MSL: MSL 3 - 168 hours
  • Number of Pins: 3
  • On Resistance Rds(on): 0.0092 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 136 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • RoHS: Yes

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