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Datasheet SPB11N60C3 - Infineon MOSFET, N-CH, 650 V, 11 A, D2PAK

Infineon SPB11N60C3

Part Number: SPB11N60C3

Manufacturer: Infineon

Description: MOSFET, N-CH, 650 V, 11 A, D2PAK

data sheetDownload Data Sheet

Docket:
SPB11N60C3 Cool MOSTM Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
VDS @ Tjmax RDS(on) ID
650 0.38 11
PG-TO263

Specifications:

  • Continuous Drain Current Id: 11 A
  • Drain Source Voltage Vds: 650 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.34 Ohm
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 125 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Yes

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