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Datasheet SPD04P10PL G - Infineon MOSFET, P-CH, 100 V, 4.2 A, TO252-3

Infineon SPD04P10PL G

Part Number: SPD04P10PL G

Manufacturer: Infineon

Description: MOSFET, P-CH, 100 V, 4.2 A, TO252-3

data sheetDownload Data Sheet

Docket:
SPD04P10PL G
SIPMOS Power-Transistor

Product Summary V DS R DS(on),max ID -100 850 -4.2 V m A
Features P-Channel Enhancement mode Logic level Avalanche rated Pb-free lead plating; RoHS compliant

Specifications:

  • Continuous Drain Current Id: -4.2 A
  • Drain Source Voltage Vds: -100 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.55 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 38 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -1.5 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: P Channel
  • RoHS: Yes

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