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Datasheet BUK952R8-60E - NXP MOSFET, N-CH, 60 V, 120 A, TO-220AB

NXP BUK952R8-60E

Part Number: BUK952R8-60E

Manufacturer: NXP

Description: MOSFET, N-CH, 60 V, 120 A, TO-220AB

data sheetDownload Data Sheet

Docket:
BUK952R8-60E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1. Product profile

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 3
  • On Resistance Rds(on): 2200 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 349 W
  • Rds(on) Test Voltage Vgs: 5 V
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (18-Jun-2012)

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