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Datasheet PSMN4R8-100BSE - NXP MOSFET, N-CH, 100 V, 120 A, D2PAK

NXP PSMN4R8-100BSE

Part Number: PSMN4R8-100BSE

Manufacturer: NXP

Description: MOSFET, N-CH, 100 V, 120 A, D2PAK

data sheetDownload Data Sheet

Docket:
PSMN4R8-100BSE
4 October 2012
N-channel 100 V 4.8 m standard level MOSFET in D2PAK
Objective data sheet
1. Product profile

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 3
  • On Resistance Rds(on): 0.0041 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 405 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex

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