RadioLocman.com Electronics ru
Advanced Search +
  

Datasheet Diodes DMN2990UFZ-7B

Manufacturer:Diodes
Series:DMN2990UFZ
Part Number:DMN2990UFZ-7B

20 V N-channel Enhancement Mode MOSFET

Datasheets

  • Download » Datasheet, PDF, 317 Kb
    Docket ↓
    DMN2990UFZ
    20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
    V(BR)DSS RDS(ON) max 0.99 @ VGS = 4.5V ID max TA = +25C 250mA 230mA 180mA 150mA Features and Benefits Low Package Profile, 0.42mm Maximum Package height 0.62mm x 0.62mm package footprint Low On-Resistance Very low Gate Threshold Voltage, 1.0V max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT 20V 1.2 @ VGS = 2.5V 1.8 @ VGS = 1.8V 2.4 @ VGS = 1.5V Description
    This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X2-DFN0606-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Applications General Purpose Interfacing Switch Power Management Functions Analog Switch ESD PROTECTED Bottom View Equivalent Circuit Top View Package Pin Configuration Ordering Information (Note 4)
    Part Number DMN2990UFZ-7B
    Notes: Case X2-DFN0606-3 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 6N = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN2990UFZ
    Document number: DS36693 Rev. 3 - 2 1 of 6 www.diodes.com August 2014
    Diodes Incorporated DMN2990UFZ Maximum Ratings (@TA = +25C, unless otherwise specified.)
    Characteristic Drain-Source Voltage Gate-Source Voltage Steady State TA = +25C TA = +85C Symbol VDSS VGSS ID IDM Value 20 8 250 170 800 Units V V mA mA NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT Continuous Drain Current (Note 5) VGS = 4.5V Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25C, unless otherwise specified.)
    Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambie ...

Manufacturer's Classification

  • Discrete MOSFETs MOSFET Master Table N Channel N Channel 20V

Other Names: DMN2990UFZ7B, DMN2990UFZ 7B

Docket:
DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
V(BR)DSS RDS(ON) max 0.99 @ VGS = 4.5V ID max TA = +25C 250mA 230mA 180mA 150mA Features and Benefits Low Package Profile, 0.42mm Maximum Package height 0.62mm x 0.62mm package footprint Low On-Resistance Very low Gate Threshold Voltage, 1.0V max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT 20V 1.2 @ VGS = 2.5V 1.8 @ VGS = 1.8V 2.4 @ VGS = 1.5V Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X2-DFN0606-3 Case Material: Molded Plastic, "Green" Molding Com...

  • Series: DMN2990UFZ (1)
    • DMN2990UFZ-7B
Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus