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Datasheet NXP PDTB143ETR

NXP PDTB143ETR

Manufacturer:NXP
Series:PDTB1xxxT
Part Number:PDTB143ETR

500 mA, 50 V PNP resistor-equipped transistors

Datasheets

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    SO T2 3 PDTB1xxxT series
    500 mA, 50 V PNP resistor-equipped transistors
    Rev. 1 -- 13 May 2014 Product data sheet 1. Product profile
    1.1 General description
    PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
    Table 1. Product overview Package NXP PDTB143ET PDTB143XT PDTB114ET SOT23 JEITA TO-236AB JEDEC NPN complement PDTD143ET PDTD143XT PDTD114ET Package configuration small Type number 1.2 Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count 10 % resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C 1.3 Applications IC inputs control Cost-saving alternative to BC807 or BC817 series transistors in digital applications Switching loads NXP Semiconductors PDTB1xxxT series
    500 mA, 50 V PNP resistor-equipped transistors 1.4 Quick reference data
    Table 2. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) PDTB143ET PDTB143XT PDTB114ET R2 bias resistor 2 (base-emitter) PDTB143ET PDTB143XT PDTB114ET 4.7 10 10 k k k 4.7 4.7 10 k k k Conditions open base Min Typ Max 50 500 Unit V mA 2. Pinning information
    Table 3. Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector)
    1 2 3
    R1 Simplified outline Graphic symbol
    3 1
    R2 2
    sym003 3. Ordering information
    Table 4. Ordering information Package Name PDTB1xxxT series TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number PDTB1XXXT_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 -- 13 May 2014 2 of 18 NXP Semiconductors PDTB1xxxT series
    500 mA, 50 V PNP resistor-equipped transistors 4. Marking
    Table 5. Marking codes Marking code[1] *4X *4Y *09 Type number PDTB143ET PDTB143XT PDTB114ET
    [1] * = placeholder for manufacturing site code 5. Limiting values
    Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitter voltage emitter-base voltage PDTB143ET PDTB143XT PDTB114ET VI input voltage PDTB143ET PDTB143XT PDTB114ET IO Ptot Tj Tamb Tstg
    [1] [2] Conditions open emitter open base open collector Min 30 30 50 - Max 50 50 10 7 10 +10 +7 +10 500 320 460 175 +175 +175 Unit V V V V V V V V mA mW mW C C C output current total power dissipation junction temperature ambient temperature storage temperature Tamb 25 C
    [1] [2] 55 55 Device mounted on an FR4 ...

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Manufacturer's Classification

  • Bipolar transistors > Resistor-equipped transistors (RETs) > RET 500 mA, 50 V > RET 500 mA, 50 V single PNP > PDTB1xxxT series

Docket:
SO T2 3 PDTB1xxxT series
500 mA, 50 V PNP resistor-equipped transistors
Rev. 1 -- 13 May 2014 Product data sheet 1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Package NXP PDTB143ET PDTB143XT PDTB114ET SOT23 JEITA TO-236AB JEDEC NPN complement PDTD143ET PDTD143XT PDTD114ET Package configuration small Type number 1.2 Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count 10 % resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C 1.3 Applications IC inputs control Cost-saving alternative to BC807 or BC817 series transistors in digital applications Switching loads NXP Semiconductors PDTB1xxxT series
500 mA, 50 V PNP resistor-equipped transistors 1.4 Quick reference data
Table 2. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) PDTB143ET PDTB143XT PD...

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