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Datasheet International Rectifier IRF5305

International Rectifier IRF5305

Manufacturer:International Rectifier
Series:IRF5305
Part Number:IRF5305

PB-IRF5305. Leaded -55 V Single P-Channel HEXFET Power MOSFET in a TO-220AB package. Obsolete

Datasheets

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    Docket ↓
    PD - 91385B IRF5305
    HEXFET Power MOSFET
    l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.06 G ID = -31A
    S Description
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings
    Parameter
    ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
    -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1N m) Units
    A W W/C V mJ A mJ V/ns C Thermal Resistance
    Parameter
    RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
    0.50 Max.
    1.4 62 Units
    C/W 3/3/00 IRF5305
    Electrical Characteristics @ TJ = 25C (unless otherwise specified)
    V(BR)DSS
    V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 -2.0 8.0 Typ. -0.034 14 66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions V VGS = 0V, ID ...

Prices

    Price IRF5305
    ProviderNamePrice
    AliExpressIRF5305S F5305S TO-2630,20 $
    More about terms of delivery »

Manufacturer's Classification

Obsolete Leaded (Pb) P-Channel MOSFETs

Docket:
PD - 91385B IRF5305
HEXFET Power MOSFET
l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.06 G ID = -31A
S Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for...

  • Series: IRF5305 (1)
    • IRF5305
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