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Datasheet Vishay IRF530

Vishay IRF530

Manufacturer:Vishay
Series:IRF530, SiHF530
Part Number:IRF530

Power MOSFET

Datasheets

  • Download » Datasheet, PDF, 157 Kb
    Docket ↓
    IRF530, SiHF530
    Vishay Siliconix Power MOSFET
    PRODUCT SUMMARY
    VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
    D FEATURES
    100 0.16 Dynamic dV/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS*
    COMPLIANT TO-220AB DESCRIPTION
    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G G D S S N-Channel MOSFET ORDERING INFORMATION
    Package Lead (Pb)-free SnPb TO-220AB IRF530PbF SiHF530-E3 IRF530 SiHF530 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)
    PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 100 20 14 10 56 0.59 69 14 8.8 88 5.5 -55 to + 175 300d 10 1.1 W/C mJ A mJ W V/ns C lbf in N m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 528 H, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 140 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91019 S11-0510-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530, SiHF530
    Vishay Siliconix
    THERMAL RESISTANCE RATINGS
    PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.7 C/W UNIT SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
    PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage ...

Prices

    Price IRF530
    ProviderNamePrice
    AliExpressIRF530N PBF IRF530 N 100V 17A TO-2200,13 $
    More about terms of delivery »

Manufacturer's Classification

MOSFETS

Docket:
IRF530, SiHF530
Vishay Siliconix Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
D FEATURES
100 0.16 Dynamic dV/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS*
COMPLIANT TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G G D S S N-Channel MOSFET ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF530PbF SiHF530-E3 IRF530 SiHF530 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage...

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