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Datasheet ON Semiconductor IRF530

Manufacturer:ON Semiconductor
Series:IRF530
Part Number:IRF530

TMOS E-FET Power Field Effect Transistor. N-Channel Enhancement-Mode Silicon Gate. Obsolete

Datasheets

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    IRF530 Product Preview TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
    This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.140 W CASE 221A-09 TO-220AB D
    MAXIMUM RATINGS (TC = 25C unless otherwise noted)
    Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -Continuous Gate-to-Source Voltage -Single Pulse (tp 50 mS) Drain Current -Continuous Drain Current -Continuous @ 100C Drain Current -Single Pulse (tp 10 mS) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID ID G S Value 100 100 20 25 14 10 49 78 0.63 -55 to 150 Unit Vdc Vdc Vdc Vdc Adc Apk Watts W/C C IDM PD TJ, Tstg UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150C)
    Single Pulse Drain-to-Source Avalanche Energy -STARTING TJ = 25C (VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W) EAS mJ 98 THERMAL CHARACTERISTICS
    Thermal Resistance -Junction-to-Case Thermal Resistance -Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
    E-FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. RJC RJA TL 1.60 62.5 275 C/W C Semiconductor Components Industries, LLC, 2006 August, 2006 -Rev. 2 1 Publication Order Number: IRF530/D IRF530
    ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
    Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ...

Prices

    Price IRF530
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    AliExpressIRF530N PBF IRF530 N 100V 17A TO-2200,13 $
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Manufacturer's Classification

MOSFETs

Docket:
IRF530 Product Preview TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circ...

  • Series: IRF530 (1)
    • IRF530
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