Datasheet MUR1100ERLG - ON Semiconductor DIODE, ULTRAFAST, 1 A

Detailed Description

Manufacturer: ON Semiconductor

Description: DIODE, ULTRAFAST, 1 A

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Docket:
MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODEt Power Rectifiers
Ultrafast "E" Series with High Reverse Energy Capability
These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.

Specifications:

• Current Ifsm: 35 A
• Diode Type: Fast Recovery
• External Diameter: 2.7 mm
• External Length / Height: 5.2 mm
• Forward Current If Max: 1 A
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 35 A
• Forward Voltage VF Max: 1.75 V
• Forward Voltage: 1.75 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: DO-41
• Repetitive Reverse Voltage Vrrm Max: 1 kV
• Reverse Recovery Time trr Max: 75 ns
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes