Datasheet NTE3322 - NTE Electronics SINGLE IGBT, 900 V, 60 A

Detailed Description

Manufacturer: NTE Electronics

Description: SINGLE IGBT, 900 V, 60 A

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Docket:
NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL
Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate-Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Emitter-Collector Foward Current, IEC DC . . . . . . . . . . . . . . . . . . . .

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 60 A
• Collector Emitter Voltage Vces: 900 V
• Power Dissipation Pd: 200 W
• Collector Emitter Voltage V(br)ceo: 900 V
• Number of Pins: 3

RoHS: Yes