Datasheet IPB50R299CP - Infineon MOSFET, N, TO-263

Infineon IPB50R299CP

Part Number: IPB50R299CP

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, TO-263

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Docket:
IPB50R299CP
CoolMOSTM Power Transistor
Features · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.299 23 V nC
PG-TO263

Specifications:

  • Continuous Drain Current Id: 12 A
  • Current Id Max: 12 A
  • Drain Source Voltage Vds: 550 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 299 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-263
  • Power Dissipation: 104 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 550 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)

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