Datasheet IPW60R099CP - Infineon MOSFET, N, 600 V, TO-247
Part Number: IPW60R099CP
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N, 600 V, TO-247
Docket:
IPW60R099CP
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge CoolMOS CP is specially designed for: · Hard switching SMPS topologies for Server and Telecom
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V nC
PG-TO247-3-1
Specifications:
- Avalanche Single Pulse Energy Eas: 800mJ
- Capacitance Ciss Typ: 2800 pF
- Continuous Drain Current Id: 31 A
- Current Id Max: 31 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 600 V
- Fall Time tf: 5 ns
- Mounting Type: SMD
- N-channel Gate Charge: 60nC
- Number of Pins: 3
- On Resistance Rds(on): 99 MOhm
- Package / Case: TO-247
- Power Dissipation Pd: 255 W
- Pulse Current Idm: 93 A
- Rds(on) Test Voltage Vgs: 10 V
- Repetitive Avalanche Energy Max: 1.2mJ
- Rise Time: 5 ns
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-247
- Transistor Polarity: N Channel
- Voltage Vds Typ: 650 V
- Voltage Vgs Max: 3 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Fischer Elektronik - FK 243 MI 247 H
- Fischer Elektronik - FK 243 MI 247 O
- Fischer Elektronik - WLK 5