Datasheet IPW60R099CP - Infineon MOSFET, N, 600 V, TO-247

Infineon IPW60R099CP

Part Number: IPW60R099CP

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, 600 V, TO-247

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Docket:
IPW60R099CP
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge CoolMOS CP is specially designed for: · Hard switching SMPS topologies for Server and Telecom
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V nC
PG-TO247-3-1

Specifications:

  • Avalanche Single Pulse Energy Eas: 800mJ
  • Capacitance Ciss Typ: 2800 pF
  • Continuous Drain Current Id: 31 A
  • Current Id Max: 31 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 600 V
  • Fall Time tf: 5 ns
  • Mounting Type: SMD
  • N-channel Gate Charge: 60nC
  • Number of Pins: 3
  • On Resistance Rds(on): 99 MOhm
  • Package / Case: TO-247
  • Power Dissipation Pd: 255 W
  • Pulse Current Idm: 93 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 1.2mJ
  • Rise Time: 5 ns
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 650 V
  • Voltage Vgs Max: 3 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - WLK 5

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