Datasheet SPD02N60S5 - Infineon MOSFET, N, 600 V, D-PAK

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, 600 V, D-PAK

Download Data Sheet

Docket:
SPU02N60S5 SPD02N60S5 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
VDS RDS(on) ID
PG-TO252
2 3 1

Specifications:

• Continuous Drain Current Id: 1.8 A
• Current Id Max: 1.8 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 3 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 25 W
• Pulse Current Idm: 3.2 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vds: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D PAK
• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5