Datasheet BSO200N03S - Infineon MOSFET, N, 30 V, SO-8

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, 30 V, SO-8

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Docket:
BSO200N03S
OptiMOS®2 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for notebook DC/DC · Qualified according to JEDEC for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Avalanche rated · dv /dt rated · Pb-free lead plating; RoHS compliant
1
Product Summary V DS R DS(on),max ID 30 20 8.8 V m A

Specifications:

• Continuous Drain Current Id: 8.8 A
• Current Id Max: 7 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 20 MOhm
• On State Resistance @ Vgs = 4.5V: 27 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.56 W
• Pulse Current Idm: 32 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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