Datasheet IPB12CN10N G - Infineon MOSFET, N CH, 67 A, 100 V, PG-TO263-3
Part Number: IPB12CN10N G
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N CH, 67 A, 100 V, PG-TO263-3
Docket:
IPB12CN10N G IPI12CN10N G
IPD12CN10N G IPP12CN10N G
OptiMOS 2 Power-Transistor
TM
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application
Specifications:
- Current Id Max: 67 A
- Drain Source Voltage Vds: 100 V
- Number of Pins: 3
- On Resistance Rds(on): 9.5 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 125 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes