Datasheet IPB12CN10N G - Infineon MOSFET, N CH, 67 A, 100 V, PG-TO263-3

Infineon IPB12CN10N G

Part Number: IPB12CN10N G

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N CH, 67 A, 100 V, PG-TO263-3

data sheetDownload Data Sheet

Docket:
IPB12CN10N G IPI12CN10N G
IPD12CN10N G IPP12CN10N G
OptiMOS 2 Power-Transistor
TM
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application

Specifications:

  • Current Id Max: 67 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 3
  • On Resistance Rds(on): 9.5 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 125 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vgs Max: 20 V

RoHS: Yes

EMS supplier