Datasheet BUK9Y11-30B - NXP MOSFET, N CH 30 V 75 A SOT669

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 30 V 75 A SOT669

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Docket:
BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev.

01 -- 30 August 2007 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 59 A
• Current Id Max: 59 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 4
• On Resistance Rds(on): 9 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOT-669
• Power Dissipation: 75 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-669
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 15 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Other Names:

BUK9Y1130B, BUK9Y11 30B