Datasheet STMicroelectronics STB11NM60T4

ManufacturerSTMicroelectronics
SeriesSTB11NM60T4
Part NumberSTB11NM60T4

N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in D2PAK package

Datasheets

Datasheet STB11NM60T4, STP11NM60
PDF, 639 Kb, Language: en, File uploaded: May 15, 2020, Pages: 21
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh II Power MOSFETs in D²PAK and TO-220
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Datasheet
PDF, 377 Kb

Prices

Detailed Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

Features:

  • 100% avalanche tested
  • Low gate input resistance
  • Low input capacitance and gate charge

Status

Lifecycle StatusNRND (Not recommended for new designs)

Packaging

PackageD2PAK

Other Options

STP11NM60

Manufacturer's Classification

  • Power Transistors > Power MOSFETs > STPOWER N-channel MOSFETs > 350 V to 700 V
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