Datasheet VNS1NV04D-E - STMicroelectronics MOSFET 2N-CH 40 V 1.7 A 8-SOIC

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET 2N-CH 40 V 1.7 A 8-SOIC

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Docket:
®
VNS1NV04D
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
TYPE VNS1NV04D
(*) Per each device

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 1.7 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance: 250 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 4 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 45 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Other Names:

VNS1NV04DE, VNS1NV04D E