Datasheet STB11NM60N-1 - STMicroelectronics MOSFET N CH 600 V 10 A I2PAK

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 10 A I2PAK

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Docket:
STx11NM60N
N-channel 600 V, 0.37 , 10 A MDmeshTM II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
Features
Type STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@TJmax) 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 0.45 0.45 0.45 0.45 0.45 ID
1 2

Specifications:

• Continuous Drain Current Id: 5 A
• Mounting Type: Through Hole
• On State Resistance: 370 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: I2-PAK
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: I2-PAK
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

STB11NM60N1, STB11NM60N 1