Datasheet STD11NM60N-1 - STMicroelectronics MOSFET, N, I-PAK

STMicroelectronics STD11NM60N-1

Part Number: STD11NM60N-1

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET, N, I-PAK

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Docket:
STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N
N-channel 600V - 0.37 - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmeshTM Power MOSFET
General features
Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45 <0.45 <0.45 <0.45 ID
3

Specifications:

  • Avalanche Single Pulse Energy Eas: 200mJ
  • Capacitance Ciss Typ: 850 pF
  • Continuous Drain Current Id: 10 A
  • Current Iar: 3.5 A
  • Current Id Max: 10 A
  • Drain Source Voltage Vds: 650 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Junction to Case Thermal Resistance A: 1.25°C/W
  • Mounting Type: Through Hole
  • On State Resistance: 450 MOhm
  • Package / Case: IPAK
  • Power Dissipation Pd: 100 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: I-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 25 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V
  • Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 13 D PAK
  • Fischer Elektronik - WLK 5
  • Panasonic - EYGA121807A
  • Roth Elektronik - RE901

Other Names:

STD11NM60N1, STD11NM60N 1

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