Datasheet SI1012X-T1-E3 - Vishay MOSFET, N CH, 20 V, 0.5 A, SC89

Vishay SI1012X-T1-E3

Part Number: SI1012X-T1-E3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, 20 V, 0.5 A, SC89

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Docket:
Si1012R/X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350

Specifications:

  • Continuous Drain Current Id: 500 mA
  • Current Id Max: 500 mA
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 1.25 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SC-89
  • Power Dissipation: 250 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 900 mV
  • Transistor Case Style: SC-89
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 900 mV
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Other Names:

SI1012XT1E3, SI1012X T1 E3

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