Datasheet IRFHM830TR2PBF - International Rectifier MOSFET, W DIODE, N CH, 30 V, 21 A, PQFN33
Part Number: IRFHM830TR2PBF
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, W DIODE, N CH, 30 V, 21 A, PQFN33
Docket:
PD - 97547A
IRFHM830PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
Specifications:
- Continuous Drain Current Id: 21 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On Resistance Rds(on): 0.003 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 2.7 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PQFN
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- International Rectifier - IR2101PBF