Datasheet SDT10S30 - Infineon DIODE, SCHOTTKY, SIC, 300 V

Detailed Description

Manufacturer: Infineon

Description: DIODE, SCHOTTKY, SIC, 300 V

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Docket:
SDP10S30 SDT10S30
Silicon Carbide Schottky Diode · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · No forward recovery
thinQ! SiC Schottky Diode
Product Summary VRRM Qc IF
PG-TO220-2-2.

Specifications:

• Alternate Case Style: DO-220
• Current Ifsm: 36 A
• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 36 A
• Forward Voltage VF Max: 1.7 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: Through Hole
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220
• Repetitive Reverse Voltage Vrrm Max: 300 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5