Infineon has expanded its family of LDMOS RF power transistors to include three new products aimed at Doherty amplifiers for LTE, WCDMA and CDMA applications. The new power transistors offer excellent efficiency, high peak power, and broad video bandwidth. They are available with P1dB output power of 150W, 270W and 360W, and feature Infineon's innovative smart discrete packages for highly compact designs.
Part Numbers:
PTFB093608FV V1 – 360W (P1dB at 28V)
PTFB082817FH V1 – 270W (P1dB at 28V)
PTFB091507FH V1 – 150W (P1dB at 28V)
PTFB093608FV Typical 1-Carrier WCDMA Characteristics at 960MHz, 28V, 3G PP signal, channel BW = 3.84MHz, PAR 10dB @ 0.01% CCDF probability:
- Pout: 112W average
- Gain: 20dB
- Efficiency: 34dB
- ACPR: -36dBc
PTFB082817FH Typical 1-Carrier WCDMA Characteristics at 821MHz, 30V, 3G PP signal, channel BW = 3.84MHz, PAR 10dB @ 0.01%
CCDF probability:
- Pout: 50W average
- Gain: 19dB
- Efficiency: 35dB
- ACPR: -35dBc
PTFB091507FH FV Typical 1-Carrier WCDMA Characteristics at 960MHz, 28V, 3G PP signal, channel BW = 3.84MHz, PAR 7.5dB @ 0.01% CCDF probability:
- Pout: 50W average
- Gain: 20dB
- Efficiency: 38dB
- ACPR: -36dBc
Each transistor has a reference circuit for easy evaluations:
LTN/PTFB093608FV - tuned at 960MHz
LTN/PTFB082817FH - tuned at 821MHz
LTN/PTFB091507FH - tuned at 960MHz
Features
- Designed for Doherty amplifiers
- High gain, excellent efficiency
- Smart discrete package enables smaller circuit designs
- Capable of handling 10:1 VSWR @ 28V, CW output power
- Integrated ESD protection
- Reference circuits available
Applications
- Cellular RF power amplifiers
- RF communication, RF power amplifiers
- Industrial RF amplifiers
