Infineon has launched a new line of 2.6 GHz LDMOS transistors that support LTE applications. The new transistors offer excellent gain, high efficiency and high peak power. They cover a wide range of output powers from 25 W to 280 W and are available with P1dB output power of 25 W, 30 W, 140 W, 200 W and 280 W. The transistors come in open-cavity packages and deliver outstanding reliability and consistency.
Dual path design PTFC260202FC (10 W+10 W) is ideal for driver applications or symmetric Doherty designs for small cell amplifiers.
PTAC260302FC is a high-efficiency solution for 5 W amplifiers. It has an asymmetric design (10 W + 20 W) that offers 15.5 dB of gain and 45% drain efficiency in a Doherty configuration.
The 140 W PTFC261402FC, the 200 W PTFC262157FH and the 280 W PTFC262808FV provide solutions for 30 W to 80 W cellular amplifiers in a variety of symmetric or asymmetric Doherty combinations.
| 2.6GHz LDMOS transistor product summary |
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Evaluation boards are available for all transistors. The evaluation board for PTAC260302FC is a Doherty amplifier design. Further information is available in the individual product datasheets, which can be downloaded.
Features
- 5 W, 30 W, 40 W, 60 W, 80 W Cellular Amplifiers solutions
- I/O matching
- RoHS compliant
- Capable of withstanding 10:1 load mismatch
- Low thermal resistance
Applications
- LTE applications
- Cellular RF power amplifiers
- RF communication, RF amplifiers
