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03-12-2017

Mitsubishi Electric to Launch Silicon-carbide Schottky-barrier Diode

Mitsubishi » BD20060S, BD20060T

Reduces power loss and physical size of power supply systems

Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more, effective immediately.

Mitsubishi - BD20060T Mitsubishi - BD20060S
BD20060T. BD20060S.

Product Features

1) Silicon carbide contributes to lower power consumption and compact size

  • Improved energy conversion results in about 21% less power loss compared to silicon (Si) products
     
  • Enables high-speed switching and downsizing of peripheral components, such as reactors

2) Improved reliability thanks to junction-barrier Schottky (JBS) structure

  • Combines Schottky barrier with p-n junction
     
  • JBS structure helps to achieve high reliability

Main Specifications

Model BD20060T BD20060S
Specification 20 A/600 V
Surge non-repetitive forward current 155 A    (8.3 msec, sine wave)
Diode forward voltage 1.35 V
Package TO-220 TO-247
Dimensions 10.1 × 29.0 × 4.7 mm 15.9 × 41.0 × 5.0 mm

Mitsubishi Electric, since first commercializing a power module incorporating SiC devices in 2010, has continued to contribute to the miniaturization and increasing energy efficiency of inverter systems. In line with growing demands for energy-efficient power supply systems for air conditioners, photovoltaic power systems and others, consumers are increasingly choosing products that incorporate SiC-SBDs.

Environmental Awareness

The products are compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.

Note: Development of these products has been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).

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