Reduces power loss and physical size of power supply systems
Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more, effective immediately.
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| BD20060T. | BD20060S. |
Product Features
1) Silicon carbide contributes to lower power consumption and compact size
- Improved energy conversion results in about 21% less power loss compared to silicon (Si) products
- Enables high-speed switching and downsizing of peripheral components, such as reactors
2) Improved reliability thanks to junction-barrier Schottky (JBS) structure
- Combines Schottky barrier with p-n junction
- JBS structure helps to achieve high reliability
Main Specifications
| Model | BD20060T | BD20060S |
| Specification | 20 A/600 V | |
| Surge non-repetitive forward current | 155 A (8.3 msec, sine wave) | |
| Diode forward voltage | 1.35 V | |
| Package | TO-220 | TO-247 |
| Dimensions | 10.1 × 29.0 × 4.7 mm | 15.9 × 41.0 × 5.0 mm |
Mitsubishi Electric, since first commercializing a power module incorporating SiC devices in 2010, has continued to contribute to the miniaturization and increasing energy efficiency of inverter systems. In line with growing demands for energy-efficient power supply systems for air conditioners, photovoltaic power systems and others, consumers are increasingly choosing products that incorporate SiC-SBDs.
Environmental Awareness
The products are compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note: Development of these products has been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
