International Rectifier Introduces MOSFETs with Fast Body Diode Characteristics for Enhanced ZVS Operation

International Rectifier IRFPS38N60L IRFPS29N60L IRFP26N60L IRFP21N60L IRFP15N60L IRFB16N60L

International Rectifier introduces a new 600V HEXFET® power MOSFET family with fast body diode characteristics tailored for soft switching applications such as the zero voltage switching (ZVS) circuits. ZVS is a technique used to maximize efficiency and enable higher power output in switch mode power supply (SMPS) circuits in today's high speed, broad bandwidth telecommunications and data communications systems where efficiency and reliability is of the greatest importance.

The fast body diode characteristic in the L Series HEXFET MOSFETs eliminates the need for additional Schottky and HV diodes in ZVS circuits, reducing component count, and shrinking space. The new devices enhance system reliability since the internal body diode is active and carries current for a portion of the duty cycle, unlike bridge or power factor correction circuits where the devices are usually hard-switched. The turn on losses are virtually eliminated in ZVS power supply designs by turning-on the MOSFETs when its integral body diode is conducting.

New 600V L series MOSFETs IRFPS38N60L, IRFPS29N60L, IRFP26N60L, IRFP21N60L, IRFP15N60L, IRFB16N60L

The maximum reverse recovery time for the body diodes in the L series devices is less than 250ns, and even shorter for lower-current devices. This lower reverse recovery period ensures that the integral body diode is completely recovered from a conduction state to a blocking state before a high voltage is applied to the device during turn off operation.

New 600V L series MOSFETs Voltage(V) RDS(ON) max (W) ID @ 25°C(A) ID @ 100°C(A) Trr Max. ns Qg(nC) Max dV/dt(V/ns) Rth j-c(°C/W) Package
IRFPS38N60L 600 0.150 38 24 250 320 13 0.22 Super-247TM
IRFPS29N60L 600 0.210 29 18 190 220 12 0.26 Super-247
IRFP26N60L 600 0.235 26 17 250 180 21 0.27 TO-247
IRFP21N60L 600 0.320 21 13 240 150 11 0.38 TO-247
IRFP15N60L 600 0.460 15 9.5 200 100 10 0.40 TO-247
IRFB16N60L 600 0.460 16 10 200 100 10 0.40 TO-220

Availability and Pricing

The new 600V HEXFET® power MOSFETs with fast body diodes are available immediately. Pricing begins at US $1.59 each for the IRFB16N60L in 10,000-unit quantities.

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