News & Press Releases Discretes - 3

Subsection: "Discretes"
Search results: 393 Output: 21-30
  1. STMicroelectronics’ 800 V 8H Triacs operate at full rated current up to the maximum junction temperature of 150 C, allowing heatsinks in drives for AC loads to be up to 50% smaller to combine compact dimensions with high reliability. Suited ...
    10-01-2021
  2. Discretes Power Alpha & Omega AOTL66518 AOB66518L
    Alpha and Omega Semiconductor announced the release of, AOTL66518 and AOB66518L , a 150 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability designed for demanding applications in Telcom Hot Swap. AOS designed these ...
    29-12-2020
  1. Discretes Power Vishay SiHH070N60EF
    Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...
    07-12-2020
  2. RF Discretes Power Ampleon BLP2425M10S250P
    Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...
    30-11-2020
  3. EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification. Efficient ...
    22-11-2020
  4. Optimized for High-Density, High-Power Server Power Supplies, and PV Inverters Alpha and Omega Semiconductor (AOS) announced the release of a Fast Switching 600 V αMOS5™ Super Junction MOSFETs in SMD-type TOLL Package. αMOS5 is ...
    19-11-2020
  5. Compact 5 mm by 6 mm Device Saves Space and Increases Efficiency in Switch‑Mode Power Supplies for Automotive Applications Vishay Intertechnology introduced an AEC-Q101 qualified n-channel 60 V MOSFET that is the industry’s first such device ...
    11-11-2020
  6. Discretes Power Infineon IQE013N04LM6 IQE013N04LM6CG
    Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies tackles this challenge by focusing on system innovation with enhancements on the component level. ...
    02-11-2020
  7. Discretes Supply Vishay IHVR-4024KE-51
    Vertical-Mount IHVR-4024KE-51 Device in Compact 4024 Case Size Offers 50 % Lower DCR Than Typical Power Inductors While Saving Board Space Vishay Intertechnology introduced a new high current inductor that provides 50% lower DCR than typical power ...
    28-10-2020
  8. Device offers significantly reduced losses thereby increasing power solution efficiency Toshiba Electronics Europe has launched a 1200 V silicon carbide (SiC) MOSFET for high power industrial applications including 400 V AC input AC-DC power ...
    27-10-2020
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