News & Press Releases Discretes - 7

Designed for Standard Gate Drives, Device Features Low Gate Charge of 22.5 nC and Q OSS of 34.2 nC in PowerPAK® 1212-8S Package Vishay Intertechnology introduced a new 60 V TrenchFET® Gen IV n-channel power MOSFET that is the ...

Devices Provide Overvoltage and Transient Voltage Protection in Consumer Goods and Industrial Applications Vishay Intertechnology introduced a new series of VDR metal oxide varistors (MOV) certified for operation up to +125 C in accordance with UL ...

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest R DS(ON) SiC MOSFET at 1200 V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler ...

Littelfuse announced an expanded PolySwitch® setP™ series of digital temperature indicators, designed to protect USB Type‑C and USB power delivery charging cables from dangerous overheating. The newest addition to the product family, the ...

Diodes Incorporated introduced the SBR10M100P5Q and SBR8M100P5Q . These automotive-compliant super barrier rectifier (SBR®) diodes employ patented and proprietary technology and can significantly reduce power loss and lower operating ...

The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands GaN Systems announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 ...

Alpha and Omega Semiconductor (AOS) announced the release of AOZ8661BDT-05 a transient voltage suppressor (TVS) for high-speed line protection using the latest Super Low Cap TVS platform. This new device is ideal for USB Type-C applications such as ...

Demand is growing for SiC power products that improve system efficiency, robustness and power density in automotive, industrial and aerospace and defense applications. Microchip Technology, via its Microsemi subsidiary, announced the production ...

Bourns announced two new families of AEC-Q101-compliant TVS diode components. Designated Models SM8S-Q and SM8SF-Q , these families are comprised of both unidirectional and bidirectional TVS diodes. They are designed to protect against voltage ...

Diodes Incorporated announced a family of NPN and PNP power bipolar transistors in a small form factor (3.3 mm × 3.3 mm), offering increased power density for applications requiring up to 100 V and 3 A. Featuring a smaller form factor, these ...