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  1. Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...
    Memory » Everspin » EMD4E001G
  2. The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...
    Memory » Microchip » 47L04, 47C04, 47L16, 47C16
  3. Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...
    Memory » Cypress » S27KL0641, S27KS0641
  4. New generation Toshiba BiCS FLASH adds layers, boosts capacity Toshiba Corporation unveiled the latest generation of its BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure, a 64-layer device that will be first in the world ...
  5. Radiation-hardened power-management device integrates comprehensive functionality in an ultra-small form factor Texas Instruments (TI) introduced the industry's first double-data-rate (DDR) memory linear regulator for space applications. The ...
    Memory · Supply » Texas Instruments » TPS7H3301-SP
  6. Opening the door to “10 nm-class DRAM” for the first time in the industry after overcoming technical challenges in DRAM scaling Samsung Electronics announced that it has begun mass producing the industry’s first 10-nanometer (nm) ...
  7. SST26VF SQI Family of Flash Products Now Available With Improved Functionality and Low Power Consumption Microchip Technology Inc. announced the introduction of automotive-grade NOR Flash products with wider voltage and a larger temperature range. ...
    Memory · Automotive » Microchip » SST26VF
  8. New Samsung DRAM Solution Signals TSV Technology is heading for Mainstream High-Capacity Memory Applications Samsung Electronics announced that it is mass producing the industry’s first “through silicon via” (TSV) double data ...
  9. New 256 Mb Device Delivers Up to 333 MBps of Read Bandwidth in a Low-Pin-Count Package; Addresses a Broad Range of the Highest-Performance Systems Cypress Semiconductor Corp. expanded its NOR HyperFlash product line with the qualification of a new ...
    Memory » Cypress » S26KL256S
  10. Innovative 3D stacked structure boosts capacity and performance Toshiba America Electronic Components , Inc. unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world's ...
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