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  1. Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...
    Memory » Everspin » EMD4E001G
    17-08-2017
  2. The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...
    Memory » Microchip » 47L04, 47C04, 47L16, 47C16
    27-10-2016
  3. Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...
    Memory » Cypress » S27KL0641, S27KS0641
    13-09-2016
  4. New generation Toshiba BiCS FLASH adds layers, boosts capacity Toshiba Corporation unveiled the latest generation of its BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure, a 64-layer device that will be first in the world ...
    09-08-2016
  5. Radiation-hardened power-management device integrates comprehensive functionality in an ultra-small form factor Texas Instruments (TI) introduced the industry's first double-data-rate (DDR) memory linear regulator for space applications. The ...
    Memory · Supply » Texas Instruments » TPS7H3301-SP
    13-07-2016
  6. Opening the door to “10 nm-class DRAM” for the first time in the industry after overcoming technical challenges in DRAM scaling Samsung Electronics announced that it has begun mass producing the industry’s first 10-nanometer (nm) ...
    22-06-2016
  7. SST26VF SQI Family of Flash Products Now Available With Improved Functionality and Low Power Consumption Microchip Technology Inc. announced the introduction of automotive-grade NOR Flash products with wider voltage and a larger temperature range. ...
    Memory · Automotive » Microchip » SST26VF
    10-02-2016
  8. New Samsung DRAM Solution Signals TSV Technology is heading for Mainstream High-Capacity Memory Applications Samsung Electronics announced that it is mass producing the industry’s first “through silicon via” (TSV) double data ...
    10-12-2015
  9. New 256 Mb Device Delivers Up to 333 MBps of Read Bandwidth in a Low-Pin-Count Package; Addresses a Broad Range of the Highest-Performance Systems Cypress Semiconductor Corp. expanded its NOR HyperFlash product line with the qualification of a new ...
    Memory » Cypress » S26KL256S
    13-08-2015
  10. Innovative 3D stacked structure boosts capacity and performance Toshiba America Electronic Components , Inc. unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world's ...
    12-08-2015
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