Datasheet PMEG6010AED,115 - NXP

Detailed Description

Manufacturer: NXP

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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D302
PMEG6010AED Low VF (MEGA) Schottky barrier diode

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 17.5 A
• Forward Voltage VF Max: 650 mV
• Number of Pins: 6
• Package / Case: SOT-457
• Repetitive Reverse Voltage Vrrm Max: 60 V

RoHS: Yes

Accessories:

• Bourns - PN-DESIGNKIT-4.

Other Names:

PMEG6010AED115, PMEG6010AED 115