Datasheet NTE51 - NTE Electronics BJT, NPN, 400 V, 4 A, TO-220

Detailed Description

Manufacturer: NTE Electronics

Description: BJT, NPN, 400 V, 4 A, TO-220

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Docket:
NTE51 Silicon NPN Transistor High Voltage, High Speed Switch
Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high­voltage, high­ speed power switching inductive circuits where fall time is critical.

This device is particularly suited for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor controls, solenoid/relay drivers and deflection circuits. Features: D Reverse Bias SOA with Inductive Loads @ TC = +100°C D 700V Blocking Capability Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector­Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current,IC Continuous

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• DC Collector Current: 4 A
• DC Current Gain: 10
• Power Dissipation: 2 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 4 MHz

RoHS: Yes