Datasheet PHT6NQ10T - NXP MOSFET, N CH, 100 V, 6.5 A, SOT223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 6.5 A, SOT223

Download Data Sheet

Docket:
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHT6NQ10T
FEATURES

Specifications:

• Continuous Drain Current Id: 3 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 4
• On Resistance Rds(on): 0.057 Ohm
• Operating Temperature Range: -65°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK
• International Rectifier - AUIRS2112S