Datasheet TK40A10K3 - Toshiba MOSFET, N CH, 100 V, 40 A, TO220SIS

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 100 V, 40 A, TO220SIS

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Docket:
TK40A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
TK40A10K3
Switching Regulator Application
· · · · Low drain-source ON resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: 40 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 3
• On Resistance Rds(on): 0.0115 Ohm
• Power Dissipation: 40 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• International Rectifier - IRS20954SPBF