Datasheet TK4A60D - Toshiba MOSFET, N CH, 600 V, 40 A, TO220SIS

Toshiba TK4A60D

Part Number: TK4A60D

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 40 A, TO220SIS

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Docket:
TK4A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK4A60D
Switching Regulator Applications
· · · · Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

  • Continuous Drain Current Id: 4 A
  • Drain Source Voltage Vds: 600 V
  • Number of Pins: 3
  • On Resistance Rds(on): 1.4 Ohm
  • Power Dissipation: 35 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5
  • National Semiconductor - LM5101CMA

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